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Tunable Electronic Properties of Two-Dimensional Transition Metal Dichalcogenide Alloys: A First-Principles
Jinyang Xi1, Tianqi Zhao1, Dong Wang1
1†MOEKey Laboratory of Organic OptoElectronics and Molecular Engineering, Department of Chemistry, Tsinghua University, 100084 Beijing, People's Republic of China.
Abstract:
We investigated the composition-dependent electronic properties of two-dimensional transition-metal dichalcogenide alloys (WxMo1-xS2) based on first-principles calculations by applying the supercell method and effective band structure approximation. It was found that hole effective mass decreases linearly with increasing W composition, and electron effective mass of alloys is always larger than that of their binary constituents. The different behaviors of electrons and holes in alloys are attributed to the fact that metal d-orbitals have different contributions to conduction bands of MoS2 and WS2 but almost identical contributions to valence bands. We examined the conduction polarity of WxMo1-xS2 monolayer alloys with four metal electrode materials (Au, Ag, Cu, and Pd). It suggests the main carrier type for transport in transistors could change from electrons to holes as W composition increases if high work function metal contacts were used. The tunable electronic properties of two-dimensional transition-metal dichalcogenide alloys make them attractive for electronic and optoelectronic applications.
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