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We theoretically predict an anomalous Hall effect in magnetic-nonmagnetic tunnel junctions. Interfacial spin-orbit coupling causes spin-dependent filtering, leading to anomalous Hall conductance and spin currents without impurities.

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Area of Science:

  • Condensed matter physics
  • Spintronics
  • Materials science

Background:

  • The anomalous Hall effect (AHE) is a phenomenon observed in magnetic materials.
  • Spin Hall effect (SHE) involves spin accumulation due to spin-dependent scattering.
  • Understanding interfacial effects is crucial for spintronic devices.

Purpose of the Study:

  • To theoretically predict a novel anomalous Hall effect in magnetic-nonmagnetic tunnel junctions.
  • To investigate the role of interfacial spin-orbit coupling in generating AHE and SHE.
  • To explore anisotropic AHE and SHE in junctions with noncentrosymmetric barriers.

Main Methods:

  • Theoretical prediction using first-principles calculations.
  • Modeling of tunneling current through a heterojunction.
  • Analysis of spin-dependent momentum filtering due to interfacial spin-orbit coupling.

Main Results:

  • Predicted existence of anomalous Hall effect and spin Hall currents in the nonmagnetic electrode.
  • Demonstrated that interfacial spin-orbit coupling induces skew tunneling without impurities.
  • Showed that noncentrosymmetric barriers lead to anisotropic AHE and SHE, separable from bulk effects.

Conclusions:

  • The proposed interfacial AHE offers a new route to study spin-orbit coupling.
  • This effect can be utilized to quantify interfacial spin-orbit fields in various material systems.
  • The findings have implications for designing advanced spintronic devices.