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    Area of Science:

    • Photonics and Optoelectronics
    • Semiconductor Devices
    • Quantum Optics

    Background:

    • Single-photon avalanche photodiodes (SPADs) are crucial for low-light detection.
    • Afterpulsing is a significant performance limitation in SPADs, affecting measurement accuracy.
    • Existing methods for afterpulsing evaluation can be complex or device-specific.

    Purpose of the Study:

    • To introduce a novel, statistically-based method for evaluating the afterpulsing effect in SPADs.
    • To quantitatively determine the afterpulsing probability (APP) using dark count rate (DCR) analysis.
    • To provide a flexible approach applicable to both individual SPAD devices and integrated circuits.

    Main Methods:

    • Analysis of the statistical properties of the dark count rate (DCR) of SPADs.
    • Characterization of temperature-dependent DCR distributions.
    • Observation of deviations from Poissonian statistics to indicate afterpulsing.

    Main Results:

    • Demonstration of a new method for quantitative APP assessment in SPADs.
    • Observed non-Poissonian DCR distributions at lower temperatures, correlating with significant afterpulsing.
    • Correlation between excess bias and the magnitude of the afterpulsing effect.

    Conclusions:

    • The proposed statistical method offers a flexible and quantitative way to evaluate SPAD afterpulsing.
    • Temperature significantly influences the afterpulsing behavior of SPADs, as evidenced by DCR statistics.
    • This technique is valuable for SPAD characterization at both device and circuit levels.