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Measurement Back-Action in Stacked Graphene Quantum Dots.

D Bischoff1, M Eich1, O Zilberberg1

  • 1Solid State Physics Laboratory and ‡Institute for Theoretical Physics, ETH Zurich , 8093 Zurich, Switzerland.

Nano Letters
|August 18, 2015
PubMed
Summary
This summary is machine-generated.

We investigated charge detector back-action in stacked graphene quantum dots. This revealed measurement-induced current via capacitive coupling and quantum effects, even in classically forbidden regimes.

Keywords:
Graphene nanoribboncapacitively coupled double dotcharge detectionmeasurement back-actionvan der Waals heterostructure

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Area of Science:

  • Quantum electronics
  • Condensed matter physics
  • Graphene nanotechnology

Background:

  • Quantum dots are crucial for quantum computing and electronics.
  • Understanding charge detector back-action is key to controlling quantum systems.

Purpose of the Study:

  • Investigate classical and quantum mechanical charge detector back-action on quantum dots.
  • Explain measurement-induced current in a novel graphene device.

Main Methods:

  • Fabricated stacked graphene quantum dots using van der Waals stacking.
  • Utilized separate source/drain contacts for biased and unbiased dots.
  • Analyzed transport phenomena under finite bias conditions.

Main Results:

  • Observed induced current in an unbiased graphene quantum dot due to a biased one.
  • Explained the current via strong capacitive coupling and energy-dependent tunneling barriers.
  • Demonstrated transport in classically forbidden regimes through higher-order quantum back-action.

Conclusions:

  • Graphene's unique properties enable novel quantum device functionalities.
  • Capacitive coupling and quantum back-action are critical for understanding transport in such systems.
  • The findings advance the control and design of graphene-based quantum devices.