Related Experiment Video
Updated: Apr 5, 2026

Characterization of Nanocrystal Size Distribution using Raman Spectroscopy with a Multi-particle Phonon Confinement Model
Published on: August 22, 2015
Nonmonotonic Size-Dependent Carrier Mobility in PbSe Nanocrystal Arrays
Jihye Lee1, One Choi1, Eunji Sim1
1Department of Chemistry and Institute of Nano-Bio Molecular Assemblies, Yonsei University, 50 Yonsei-ro Seodaemun-gu, Seoul 120-749, Korea.
Abstract:
On the basis of a tight binding system-bath model, we investigated carrier mobility of PbSe nanocrystal (NC) arrays as a function of NC size and inter-NC separation. The size-dependent trend of calculated carrier mobilities are in excellent agreement with recent experimental measurements: electron mobility increased up to NC diameter of ∼6 nm and then decreased for larger NCs, whereas hole mobility showed a monotonic size-dependency. Carrier mobility increase was associated with reduced activation energy that governs charge-transfer processes. In contrast, the decrease in electron mobility for large NCs was found to be due to smaller electronic coupling. Control of inter-NC separation is crucial for mobility enhancement: the mobility may change by an order of magnitude when inter-NC separation varies by as little as 1 to 2 Å. We anticipate similar size-dependency of the mobility in other semiconductor NC arrays, although crossover diameter in which mobility reaches its maximum depends on the material.
More Related Videos
08:43Effect of Bending on the Electrical Characteristics of Flexible Organic Single Crystal-based Field-effect Transistors
Published on: November 7, 2016
08:12Ohmic Contact Fabrication Using a Focused-ion Beam Technique and Electrical Characterization for Layer Semiconductor Nanostructures
Published on: December 5, 2015
Related Concept Videos
Carrier Transport
Drift Current:
The drift of charge carriers is started by an external electric field (E). Charged particles, such as electrons and holes, experience an acceleration between collisions with lattice atoms. For electrons, this results in a drift velocity (vd) given by:
Carrier Generation and Recombination
This process is given by the generation rate G and is efficient due to the conservation of momentum between the valence band maximum and conduction band minimum.
Indirect generation involves an...