Related Experiment Video
Updated: Apr 5, 2026

Optimized Fabrication Procedure for High-Quality Graphene-based Moiré Superlattice Devices
Published on: July 11, 2025
Topological Bloch bands in graphene superlattices
Justin C W Song1, Polnop Samutpraphoot2, Leonid S Levitov3
1Walter Burke Institute for Theoretical Physics, California Institute of Technology, CA 91125; Institute for Quantum Information and Matter, and Department of Physics, California Institute of Technology, CA 91125; Department of Physics, Massachusetts Institute of Technology, Cambridge, MA 02139 justin.song.cw@gmail.com levitov@mit.edu.
Abstract:
We outline a designer approach to endow widely available plain materials with topological properties by stacking them atop other nontopological materials. The approach is illustrated with a model system comprising graphene stacked atop hexagonal boron nitride. In this case, the Berry curvature of the electron Bloch bands is highly sensitive to the stacking configuration. As a result, electron topology can be controlled by crystal axes alignment, granting a practical route to designer topological materials. Berry curvature manifests itself in transport via the valley Hall effect and long-range chargeless valley currents. The nonlocal electrical response mediated by such currents provides diagnostics for band topology.
More Related Videos
11:42Fabrication of Gate-tunable Graphene Devices for Scanning Tunneling Microscopy Studies with Coulomb Impurities
Published on: July 24, 2015
13:56Probe Type II Band Alignment in One-Dimensional Van Der Waals Heterostructures Using First-Principles Calculations
Published on: October 12, 2019
Related Concept Videos
Energy Bands in Solids
Band Formation:
When atoms are brought close together, as in a solid, these discrete energy levels begin to split due to the overlap of electron orbitals from adjacent atoms. This split occurs because of the Pauli exclusion principle, which states...
Band Theory
The energy difference between these bands is known as the band gap.
Conductor, Semiconductor,...
Bewley Lattice Diagram
Valence Bond Theory
Debye–Huckel–Onsager Conductance Equation
Fermi Level Dynamics
Electron affinity in semiconductors refers to the energy gap between the minimum of its conduction band and the vacuum level and it is a critical parameter in determining how easily a semiconductor can accept additional electrons.
The work...