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Atomically Defined Templates for Epitaxial Growth of Complex Oxide Thin Films

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Subnanometer Thin β-Indium Sulfide Nanosheets.

Shinjita Acharya¹, Suresh Sarkar¹, Narayan Pradhan¹

¹Department of Materials Science and Centre for Advanced Materials, Indian Association for the Cultivation of Science, Kolkata, 700032 India.

The Journal of Physical Chemistry Letters

|August 21, 2015

Summary

This summary is machine-generated.

Researchers explored the formation of ultra-thin indium sulfide (In2S3) nanosheets. Controlling precursor decomposition and nucleation temperature precisely tunes nanosheet thickness down to two atomic layers.

Keywords:

folding indium sulfide nanosheets single source precursors subnanometer thin

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Published on: December 20, 2016

Area of Science:

Materials Science
Nanotechnology
Inorganic Chemistry

Background:

Nanosheets are 2D nanomaterials with micrometer lengths and nanometer thicknesses.
Controlling crystal growth and atomic-layer thickness in inorganic semiconductor nanosheets remains challenging.
Subnanometer thin nanosheets offer unique properties for advanced applications.

Purpose of the Study:

Investigate parameters controlling thickness and formation mechanism of cubic indium sulfide (In2S3) nanosheets.
Explore the synthesis of two-atomic-layer thin In2S3 nanosheets.
Understand the relationship between reaction conditions and nanosheet dimensions.

Main Methods:

Controlled decomposition of a single-source precursor for In2S3.
Monitoring growth kinetics as a function of nucleation temperature.
Correlating nanosheet thickness with evolved H2S gas rate and precursor decomposition rate.

Main Results:

Achieved subnanometer thin (two atomic layers) cubic In2S3 nanosheets.
Demonstrated that growth kinetics depend on precursor decomposition rate and nucleation temperature.
Linked nanosheet thickness variation along the polar [111] direction to H2S evolution rate.

Conclusions:

Precise control over precursor decomposition and nucleation temperature is key to synthesizing ultra-thin In2S3 nanosheets.
The study elucidates the formation mechanism of atomic-layer controlled In2S3 nanosheets.
Findings provide a pathway for tuning the thickness of semiconductor nanosheets for specific applications.