Wide gamut white light emitting diodes using quantum dot-silicone film protected by an atomic layer deposited TiO2
Guan-Hong Chen1, Chang-Wei Yeh, Ming-Hua Yeh
1Department of Materials Science & Engineering, National Tsing Hua University, No. 101, Sec. 2, Guangfu Rd., Hsinchu City 300, Taiwan. chenhs@mx.nthu.edu.tw.
Chemical Communications (Cambridge, England)
|August 22, 2015
Abstract:
Wide gamut light emitting diodes using quantum dot-silicone film protected by atomic layer deposited TiO2 film were demonstrated. The core/shell QDs with multi-emission peaks were synthesised by a one-pot approach, in which the emission wavelength and colour composition were in situ adjusted during the synthetic process.
