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Atmospheric Pressure Fabrication of Large-Sized Single-Layer Rectangular SnSe Flakes
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BN-Enabled Epitaxy of Pb(1-x)Sn(x)Se Nanoplates on SiO₂/Si for High-Performance Mid-Infrared Detection
Qisheng Wang1, Yao Wen1, Fengrui Yao2
1CAS Key Laboratory of Nanosystem and Hierarchical Fabrication, National Center for Nanoscience and Technology, Beijing, 100190, P. R. China.
Abstract:
By designing a few-layer boron nitried (BN) buffer layer, topological crystalline insulator Pb(1-x)Sn(x)Se nanoplates are directly grown on SiO2/Si, which shows high compatibility with current Si-based integrated circuit technology. Back-gated field-effect transistors of Pb(1-x)Sn(x)Se nanoplates exhibit a room-temperature carrier mobility of 0.73-4.90 cm(2) V(-1) s(-1), comparable to layered materials and molecular crystals, and high-efficiency mid-IR detection (1.9-2.0 μm).
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