Aligned Growth of Hexagonal Boron Nitride Monolayer on Germanium
Jun Yin1, Xiaofei Liu1, Wanglin Lu2
1State Key Laboratory of Mechanics and Control of Mechanical Structures, Key Laboratory for Intelligent Nano Materials and Devices of the Ministry of Educationand Institute of Nanoscience, Nanjing University of Aeronautics and Astronautics, Nanjing, 210016, China.
Small (Weinheim an Der Bergstrasse, Germany)
|August 27, 2015
Abstract:
A hexagonal boron nitride monolayer with aligned orientations is grown on reusable semiconducting germanium. The number of primary orientations of the h-BN domains depends on the symmetry of the underlying crystal face, and Ge (110) gives rise to only two opposite orientations. The structures and electrical properties of grain boundaries between h-BN domains with opposite orientations are also systematically analyzed.
