Related Experiment Video
Updated: Apr 4, 2026

Probing C84-embedded Si Substrate Using Scanning Probe Microscopy and Molecular Dynamics
Published on: September 28, 2016
Development and testing of an active high voltage saturation probe for characterization of ultra-high voltage silicon
Argenis V Bilbao1, James A Schrock1, William B Ray1
1Center for Pulsed Power and Power Electronics, Texas Tech University, Lubbock, Texas 79409, USA.
Abstract:
Obtaining accurate collector to emitter voltage measurements when characterizing high voltage silicon carbide (SiC) devices requires the ability to measure voltages in the range of zero to 10 V while the device is in the on-state and the ability to withstand ultra-high voltages while the device is in the off-state. This paper presents a specialized voltage probe capable of accurately measuring the aforementioned range. A comparison is made between the proposed probe and other commonly used high voltage probe alternatives in relation to high voltage SiC device testing. Testing of the probe was performed to ensure linearity, high accuracy, and high bandwidth.
Related Concept Videos
Biasing of Metal-Semiconductor Junctions
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...
Characteristics of MOSFET
Various vital parameters influence their functionality, which is crucial for theory and electronics applications. First, channel dimensions, precisely length, and width, are pivotal. The size of these channels affects the transistor's ability to carry current and switching speeds; shorter channels typically enable...
MOSFET: Enhancement Mode
In their basic form, enhancement-mode MOSFETs are typically non-conductive when the gate-source voltage (Vgs) is zero. This default 'off' state means no...
Non-ohmic Devices
Consider a simple circuit consisting of a battery, a diode, and a resistor. A...
Modeling of Diode Forward Characteristics
MOS Capacitor
The metal gate is typically made from highly conductive materials such as aluminum or polysilicon. Beneath the metal gate lies a thin layer of...

