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Macroscale Transformation Optics Enabled by Photoelectrochemical Etching.

David S Barth1, Christopher Gladden1, Alessandro Salandrino1

  • 1NSF Nano-scale Science and Engineering Center (NSEC), University of California Berkeley, Berkeley, CA, 94720, USA.

Advanced Materials (Deerfield Beach, Fla.)
|September 3, 2015
PubMed
Summary

Photoelectrochemical etching of silicon creates refractive index gradients for advanced optical devices. This technique enables the fabrication and transfer of porous silicon layers for novel device applications.

Keywords:
gradient index opticsporous silicontransformation optics, photochemical etching

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Area of Science:

  • Materials Science
  • Optics
  • Nanotechnology

Background:

  • Silicon-based photonics is a rapidly growing field.
  • Fabricating devices with tunable refractive indices is crucial for optical applications.

Purpose of the Study:

  • To investigate the use of photoelectrochemical etching for creating lateral refractive index gradients in silicon.
  • To explore the fabrication of macroscale transformation optical devices.
  • To assess the potential of transferring patterned porous silicon layers to other materials.

Main Methods:

  • Photoelectrochemical etching of silicon.
  • Fabrication of patterned porous silicon layers.
  • Transfer of porous layers to different substrates.

Main Results:

  • Successfully formed lateral refractive index gradients in silicon.
  • Demonstrated the fabrication of macroscale devices with significant refractive index gradients.
  • Showcased the ability to lift and transfer patterned porous silicon layers.

Conclusions:

  • Photoelectrochemical etching is a viable technique for creating refractive index gradients in silicon for optical devices.
  • The method allows for the creation of macroscale devices.
  • Transferring porous silicon layers opens new avenues for novel device architectures and applications.