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Related Concept Videos

P-N junction01:11

P-N junction

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A p-n junction is formed when p-type and n-type semiconductor materials are joined together. At the interface of the p-n junction, holes from the p-side and electrons from the n-side begin to diffuse into the opposite sides due to the concentration gradient. This diffusion of carriers leads to a region around the junction where there are no free charge carriers, known as the depletion region. The charge density within the depletion region for the n-side and p-side can be described by the...
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The equivalent resistance of a combination of resistors depends on their values and how they are connected.
The simplest combinations of resistors are series and parallel connections. In a series circuit, the first resistor's output current flows into the second resistor's input; therefore, each resistor's current is the same. Thus, the equivalent resistance is the algebraic sum of the resistances. The current through the circuit can be found from Ohm's law and is equal to the...
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Biasing of P-N Junction01:16

Biasing of P-N Junction

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The operation of a p-n junction diode involves various biasing conditions, including forward bias, reverse bias, and equilibrium.
In equilibrium, no external voltage is applied across the p-n junction. The depletion region is formed at the junction interface due to the diffusion of carriers, which leaves behind charged dopants, acceptors on the p-side, and donors on the n-side. These immobile charges create an electric field that prevents further diffusion of carriers. The related energy band...
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Power and Energy01:12

Power and Energy

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The power and energy delivered to an element are subjects of great significance in the field of electrical engineering. It is a well-known fact that a 100-watt light bulb emits more light than a 60-watt one. Therefore, power and energy calculations play a crucial role in the analysis of electrical circuits.
Power, defined as the time rate of expending or absorbing energy, is quantified in units called watts (W). The relation between power and energy is mathematically given as
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Electrical Power01:07

Electrical Power

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Electric power is the product of current and voltage, represented in units of joules per second, or watts. For example, cars often have one or more auxiliary power outlets with which you can charge a cell phone or other electronic devices. These outlets may be rated at 20 amps and 12 volts, so that the circuit can deliver a maximum power of 240 watts. Consider a 25 Watt bulb and a 60 Watt bulb. The conversion of electrical energy produces heat and light, while the kinetic energy lost by the...
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Power Dissipation and Electrical Breakdown in Black Phosphorus.

Michael Engel1, Mathias Steiner1,2, Shu-Jen Han1

  • 1IBM Research, Yorktown Heights, New York 10598, United States.

Nano Letters
|September 9, 2015
PubMed
Summary
This summary is machine-generated.

We measured black phosphorus device temperatures and heating coefficients under electrical power. We observed a linear temperature rise and determined the breakdown point, aiding future two-dimensional material electronics.

Keywords:
Black phosphorusnanoelectronicsoptical spectroscopypower dissipation

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Area of Science:

  • Materials Science
  • Condensed Matter Physics
  • Nanotechnology

Background:

  • Black phosphorus is a novel two-dimensional material with potential for advanced electronics.
  • Understanding thermal properties and breakdown limits is crucial for device reliability.

Purpose of the Study:

  • To investigate the operating temperatures and heating coefficients of multilayer black phosphorus devices.
  • To determine the electrical breakdown threshold and failure mechanisms.

Main Methods:

  • Combined micro-Raman spectroscopy and electrical transport measurements.
  • Analyzed device failure using scanning electron microscopy and atomic force microscopy.

Main Results:

  • Observed a linear temperature increase up to 600 K with a heating coefficient of 0.896 K μm(3)/mW.
  • Identified the threshold power and temperature for electrical breakdown.
  • Characterized fracture in the black phosphorus layer leading to device failure.

Conclusions:

  • The thermal behavior and breakdown characteristics of black phosphorus devices have been quantified.
  • These findings are essential for the development of reliable black phosphorus-based electronics and optoelectronics.