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Stacked 3D RRAM Array with Graphene/CNT as Edge Electrodes.

Yue Bai1, Huaqiang Wu1,2, Kun Wang1

  • 1Institute of Microelectronics, Tsinghua University, Beijing, China, 100084.

Scientific Reports
|September 9, 2015
PubMed
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This study introduces novel 3D resistive random-access memory (RRAM) using graphene and carbon nanotubes (CNTs) for higher array density. These low-dimensional materials enable smaller, integrated selector devices for advanced memory applications.

Area of Science:

  • Materials Science
  • Electrical Engineering
  • Nanotechnology

Background:

  • 3D RRAM faces challenges in scaling and selector integration for higher array density.
  • Existing 3D structures are limited by horizontal and vertical scaling constraints.

Purpose of the Study:

  • To develop a novel 3D RRAM structure utilizing low-dimensional materials for enhanced array density.
  • To overcome scaling limitations and integrate selector devices effectively within a 3D architecture.

Main Methods:

  • Fabrication of a two-layer 3D RRAM using monolayer graphene as edge electrodes.
  • Integration of carbon nanotubes (CNTs) as edge electrodes to leverage their unique electronic properties.
  • Characterization of device performance, focusing on switching behavior and carrier transport.

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Main Results:

  • Demonstrated normal switching operation of RRAM devices with nanometer-scale graphene edge electrodes.
  • Successfully fabricated and characterized a selector-integrated 3D RRAM using CNTs, exploiting Schottky barrier effects.
  • Confirmed the potential for significantly increased array density due to the novel structure and materials.

Conclusions:

  • Low-dimensional materials like graphene and CNTs offer a viable solution for advanced 3D RRAM.
  • The proposed structure effectively addresses scaling and integration challenges, paving the way for high-density memory.
  • The built-in selector functionality using CNTs enhances device performance and integration feasibility.