Jove
Visualize
Contact Us
JoVE
x logofacebook logolinkedin logoyoutube logo
ABOUT JoVE
OverviewLeadershipBlogJoVE Help Center
AUTHORS
Publishing ProcessEditorial BoardScope & PoliciesPeer ReviewFAQSubmit
LIBRARIANS
TestimonialsSubscriptionsAccessResourcesLibrary Advisory BoardFAQ
RESEARCH
JoVE JournalMethods CollectionsJoVE Encyclopedia of ExperimentsArchive
EDUCATION
JoVE CoreJoVE BusinessJoVE Science EducationJoVE Lab ManualFaculty Resource CenterFaculty Site
Terms & Conditions of Use
Privacy Policy
Policies

Related Concept Videos

MOS Capacitor01:25

MOS Capacitor

1.8K
A Metal-Oxide-Semiconductor (MOS) capacitor is a fundamental structure used extensively in semiconductor device technology, particularly in the fabrication of integrated circuits and MOSFETs (metal-oxide-semiconductor field-effect transistors). The MOS capacitor consists of three layers: a metal gate, a dielectric oxide, and a semiconductor substrate.
The metal gate is typically made from highly conductive materials such as aluminum or polysilicon. Beneath the metal gate lies a thin layer of...
1.8K
Metal-Semiconductor Junctions01:24

Metal-Semiconductor Junctions

1.4K
The contact of metal and semiconductor can lead to the formation of a junction with either Schottky or Ohmic behavior.
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The...
1.4K
Schottky Barrier Diode01:27

Schottky Barrier Diode

1.3K
Schottky barrier diodes are specialized semiconductor devices characterized by their unique construction. This construction involves combining a metal layer with a moderately doped n-type semiconductor material. This combination leads to the formation of a Schottky barrier, a pivotal element that defines the diode's operational characteristics. The core functionality of Schottky barrier diodes is their capacity to allow current to flow in only one direction due to their distinctive...
1.3K
MOSFET: Enhancement Mode01:22

MOSFET: Enhancement Mode

1.0K
Enhancement-mode MOSFETs are pivotal components in electronics, distinguished by their capacity to act as highly efficient switches. They are part of the larger family of metal-oxide Semiconductor Field-Effect Transistors (MOSFETs). They are available in two types: p-channel and n-channel, each tailored to specific polarity operations.
In their basic form, enhancement-mode MOSFETs are typically non-conductive when the gate-source voltage (Vgs) is zero. This default 'off' state means no...
1.0K
The Resting Membrane Potential01:21

The Resting Membrane Potential

152.4K
Overview
152.4K
Characteristics of MOSFET01:17

Characteristics of MOSFET

1.3K
Metal-oxide-semiconductor field-effect Transistors, or MOSFETs, play a critical role in electronic circuits. They are primarily utilized for amplifying and switching signals.
Various vital parameters influence their functionality, which is crucial for theory and electronics applications. First, channel dimensions, precisely length, and width, are pivotal. The size of these channels affects the transistor's ability to carry current and switching speeds; shorter channels typically enable...
1.3K

You might also read

Related Articles

Articles linked to this work by shared authors, journal, and citation graph.

Sort by
Same author

The 1<sup>st</sup> year of the COVID-19 epidemic in Estonia: a population-based nationwide sequential/consecutive cross-sectional study.

Public health·2022
Same author

Tunable φ Josephson junction ratchet.

Physical review. E·2016
Same author

[Bronchial carcinoma and knee pain. Secondary hypertrophic osteoarthropathy].

Der Unfallchirurg·2012
Same author

Azimuthal anisotropy of charged particles at high transverse momenta in Pb-Pb collisions at sqrt[s(NN)] = 2.76  TeV.

Physical review letters·2012
Same author

Observation of a new Ξb baryon.

Physical review letters·2012
Same author

Search for dark matter and large extra dimensions in pp collisions yielding a photon and missing transverse energy.

Physical review letters·2012

Related Experiment Video

Updated: Apr 4, 2026

Assembly and Characterization of Biomolecular Memristors Consisting of Ion Channel-doped Lipid Membranes
08:07

Assembly and Characterization of Biomolecular Memristors Consisting of Ion Channel-doped Lipid Membranes

Published on: March 9, 2019

8.4K

A double barrier memristive device.

M Hansen1, M Ziegler1, L Kolberg1

  • 1Nanoelektronik, Technische Fakultät Kiel, Christian-Albrechts-Universität Kiel, Kiel 24143, Germany.

Scientific Reports
|September 9, 2015
PubMed
Summary

This study introduces a novel quantum memristive device with a non-filamentary resistive switching mechanism. The device shows potential for advanced memory applications due to its uniform performance and lack of a forming step.

More Related Videos

A Method for Growing Bio-memristors from Slime Mold
07:46

A Method for Growing Bio-memristors from Slime Mold

Published on: November 2, 2017

9.5K
In Situ Transmission Electron Microscopy with Biasing and Fabrication of Asymmetric Crossbars Based on Mixed-Phased a-VOx
09:49

In Situ Transmission Electron Microscopy with Biasing and Fabrication of Asymmetric Crossbars Based on Mixed-Phased a-VOx

Published on: May 13, 2020

4.5K

Related Experiment Videos

Last Updated: Apr 4, 2026

Assembly and Characterization of Biomolecular Memristors Consisting of Ion Channel-doped Lipid Membranes
08:07

Assembly and Characterization of Biomolecular Memristors Consisting of Ion Channel-doped Lipid Membranes

Published on: March 9, 2019

8.4K
A Method for Growing Bio-memristors from Slime Mold
07:46

A Method for Growing Bio-memristors from Slime Mold

Published on: November 2, 2017

9.5K
In Situ Transmission Electron Microscopy with Biasing and Fabrication of Asymmetric Crossbars Based on Mixed-Phased a-VOx
09:49

In Situ Transmission Electron Microscopy with Biasing and Fabrication of Asymmetric Crossbars Based on Mixed-Phased a-VOx

Published on: May 13, 2020

4.5K

Area of Science:

  • Materials Science
  • Solid State Physics
  • Quantum Mechanics

Background:

  • Memristive devices are crucial for next-generation electronics.
  • Understanding resistive switching mechanisms is key to device optimization.
  • Non-filamentary switching offers advantages in scalability and reliability.

Purpose of the Study:

  • To present a novel quantum mechanical memristive device (Nb/Al/Al2O3/NbxOy/Au).
  • To investigate the resistive switching mechanism in the NbxOy layer.
  • To explore the potential applications in memory and neuromorphic circuits.

Main Methods:

  • Fabrication of an ultra-thin memristive layer device.
  • Experimental analysis of current distribution in low and high resistance states.
  • Theoretical analysis of oxygen diffusion and interface state modifications.

Main Results:

  • Demonstrated uniform current distribution across a wide area range (70–2300 μm²).
  • Identified a non-filamentary resistive switching mechanism.
  • Showed that resistive switching is driven by oxygen diffusion and interface state changes.

Conclusions:

  • The Nb/Al/Al2O3/NbxOy/Au device exhibits promising non-filamentary resistive switching.
  • The device offers intrinsic current compliance, improved retention, and no forming procedure.
  • Potential applications include highly dense random access memories and neuromorphic circuits.