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AlGaN/GaN Metal-Oxide-Semiconductor High-Electron-Mobility Transistor with Polarized P(VDF-TrFE) Ferroelectric

Xinke Liu1, Youming Lu1, Wenjie Yu2

  • 1College of Materials Science and Engineering, Shenzhen Key Laboratory of Special Functional Materials, Nanshan District Key Lab for Biopolymer and Safety Evaluation, Shenzhen University, 3688 Nanhai Ave, Shenzhen, 518060, People Republic of China.

Scientific Reports
|September 15, 2015
PubMed

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