Search research articles

ABOUT JoVE

Overview Leadership Blog JoVE Help Center

AUTHORS

Publishing Process Editorial Board Scope & Policies Peer Review FAQ Submit

LIBRARIANS

Testimonials Subscriptions Access Resources Library Advisory Board FAQ

RESEARCH

JoVE Journal Methods Collections JoVE Encyclopedia of Experiments Archive

EDUCATION

JoVE Core JoVE Business JoVE Science Education JoVE Lab Manual Faculty Resource Center Faculty Site

Terms & Conditions of Use

Related Concept Videos

Scanning Electron Microscopy

Scanning Electron Microscopy

A scanning electron microscope (SEM) is used to study the surface features of a sample by using an electron beam that scans the sample surface in a two-dimensional manner. Typically, areas between ~1 centimeter to 5 micrometers in width can be imaged. SEM can be used to image bacteria, viruses, tissues as well as larger samples like insects. Conventional SEM gives a magnification ranging from 20X to 30,000X and spatial resolution of 50 to 100 nanometers.
Fundamental Principles
Accelerated...

You might also read

Related Articles

Articles linked to this work by shared authors, journal, and citation graph.

Sort by

Same author

Managing adverse events in patients with metastatic colorectal cancer receiving trifluridine/tipiracil in combination with bevacizumab.

ESMO gastrointestinal oncology·2026

Same author

Harvesting, revascularization and innervation of a laryngeal transplant.

European annals of otorhinolaryngology, head and neck diseases·2025

Same author

Clinically meaningful outcomes in refractory metastatic colorectal cancer: a decade of defining and raising the bar.

ESMO open·2024

Same author

Impact of KRAS<sup>G12</sup> mutations on survival with trifluridine/tipiracil plus bevacizumab in patients with refractory metastatic colorectal cancer: post hoc analysis of the phase III SUNLIGHT trial.

ESMO open·2024

Same author

Laryngeal graft after total laryngectomy in humans: A SWiM analysis.

European annals of otorhinolaryngology, head and neck diseases·2023

Same author

2023: First laryngeal transplantation in France by the "ECLAT" group!

European annals of otorhinolaryngology, head and neck diseases·2023

Search research articles

Related Experiment Video

Updated: Apr 3, 2026

$Characterization of Ultra-fine Grained and Nanocrystalline Materials Using Transmission Kikuchi Diffraction$

Characterization of Ultra-fine Grained and Nanocrystalline Materials Using Transmission Kikuchi Diffraction

Published on: April 1, 2017

Distinguishing cubic and hexagonal phases within InGaN/GaN microstructures using electron energy loss spectroscopy.

I J Griffiths¹, D Cherns¹, S Albert²

¹School of Physics, H. H. Wills Physics Laboratory, University of Bristol, Bristol, BS8 1TL, United Kingdom.

Journal of Microscopy

|September 15, 2015

Summary

This summary is machine-generated.

Electron Energy Loss Spectroscopy reveals distinct N K-edge fine structures in cubic and hexagonal gallium nitride (GaN). This allows for precise mapping of crystal phases in 3D InGaN/GaN microstructures, crucial for understanding device properties.

Keywords:

EELS InGaN micro-structures STEM light emitting diodes

More Related Videos

Electron Channeling Contrast Imaging for Rapid III-V Heteroepitaxial Characterization

Electron Channeling Contrast Imaging for Rapid III-V Heteroepitaxial Characterization

Published on: July 17, 2015

A Novel Method for In Situ Electromechanical Characterization of Nanoscale Specimens

A Novel Method for In Situ Electromechanical Characterization of Nanoscale Specimens

Published on: June 2, 2017

Related Experiment Videos

Last Updated: Apr 3, 2026

$Characterization of Ultra-fine Grained and Nanocrystalline Materials Using Transmission Kikuchi Diffraction$

Characterization of Ultra-fine Grained and Nanocrystalline Materials Using Transmission Kikuchi Diffraction

Published on: April 1, 2017

Electron Channeling Contrast Imaging for Rapid III-V Heteroepitaxial Characterization

Electron Channeling Contrast Imaging for Rapid III-V Heteroepitaxial Characterization

Published on: July 17, 2015

A Novel Method for In Situ Electromechanical Characterization of Nanoscale Specimens

A Novel Method for In Situ Electromechanical Characterization of Nanoscale Specimens

Published on: June 2, 2017

Area of Science:

Materials Science
Solid State Physics
Nanotechnology

Background:

3D Indium Gallium Nitride/Gallium Nitride (InGaN/GaN) microstructures are vital for optoelectronic devices.
Metal Organic Vapor Phase Epitaxy (MOVPE) and Molecular Beam Epitaxy (MBE) are key growth techniques.
Crystal phase variations, particularly cubic inclusions in hexagonal wurtzite GaN, impact device performance.

Purpose of the Study:

To investigate the crystal phase differences in 3D InGaN/GaN microstructures.
To develop a method for mapping cubic and hexagonal GaN regions.
To understand how crystal phase affects electronic properties of light-emitting devices.

Main Methods:

Utilized a range of electron microscopy techniques.
Employed Electron Energy Loss Spectroscopy (EELS) to analyze material.
Focused on variations in the fine structure of the Nitrogen K-edge (N K-edge).

Main Results:

Observed clear differences in the N K-edge fine structure between cubic and hexagonal GaN.
Successfully mapped cubic and hexagonal regions within a GaN/InGaN microcolumnar device.
Demonstrated the capability of EELS for phase differentiation.

Conclusions:

EELS is an effective technique for distinguishing and mapping cubic and hexagonal GaN phases.
Understanding and mapping these phases is essential for optimizing InGaN/GaN devices.
Spatial resolution limitations of the mapping method were discussed.