Jove
Visualize
Contact Us
JoVE
x logofacebook logolinkedin logoyoutube logo
ABOUT JoVE
OverviewLeadershipBlogJoVE Help Center
AUTHORS
Publishing ProcessEditorial BoardScope & PoliciesPeer ReviewFAQSubmit
LIBRARIANS
TestimonialsSubscriptionsAccessResourcesLibrary Advisory BoardFAQ
RESEARCH
JoVE JournalMethods CollectionsJoVE Encyclopedia of ExperimentsArchive
EDUCATION
JoVE CoreJoVE BusinessJoVE Science EducationJoVE Lab ManualFaculty Resource CenterFaculty Site
Terms & Conditions of Use
Privacy Policy
Policies

Related Concept Videos

MOSFET: Enhancement Mode01:22

MOSFET: Enhancement Mode

1.0K
Enhancement-mode MOSFETs are pivotal components in electronics, distinguished by their capacity to act as highly efficient switches. They are part of the larger family of metal-oxide Semiconductor Field-Effect Transistors (MOSFETs). They are available in two types: p-channel and n-channel, each tailored to specific polarity operations.
In their basic form, enhancement-mode MOSFETs are typically non-conductive when the gate-source voltage (Vgs) is zero. This default 'off' state means no...
1.0K
MOS Capacitor01:25

MOS Capacitor

1.8K
A Metal-Oxide-Semiconductor (MOS) capacitor is a fundamental structure used extensively in semiconductor device technology, particularly in the fabrication of integrated circuits and MOSFETs (metal-oxide-semiconductor field-effect transistors). The MOS capacitor consists of three layers: a metal gate, a dielectric oxide, and a semiconductor substrate.
The metal gate is typically made from highly conductive materials such as aluminum or polysilicon. Beneath the metal gate lies a thin layer of...
1.8K
Schottky Barrier Diode01:27

Schottky Barrier Diode

1.3K
Schottky barrier diodes are specialized semiconductor devices characterized by their unique construction. This construction involves combining a metal layer with a moderately doped n-type semiconductor material. This combination leads to the formation of a Schottky barrier, a pivotal element that defines the diode's operational characteristics. The core functionality of Schottky barrier diodes is their capacity to allow current to flow in only one direction due to their distinctive...
1.3K
Metal-Semiconductor Junctions01:24

Metal-Semiconductor Junctions

1.4K
The contact of metal and semiconductor can lead to the formation of a junction with either Schottky or Ohmic behavior.
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The...
1.4K
Diode: Forward bias01:20

Diode: Forward bias

2.9K
In semiconductor devices, diodes play a crucial role in directing current flow, and its operation is primarily categorized into forward bias and reverse bias. A diode is said to be forward-biased when its p-type region is connected to the positive terminal of a battery and its n-type region is linked to the negative terminal. This configuration reduces the potential barrier within the diode, allowing current to flow easily from the p to the n-type region.
The behavior of a diode in forward bias...
2.9K
Diode: Reverse bias01:14

Diode: Reverse bias

2.7K
A diode is reverse-biased when the positive terminal of an external voltage source is connected to the n-type material and the negative terminal to the p-type material. This configuration opposes the natural direction of current flow through the diode, effectively increasing the width of the depletion region and the barrier potential. The reverse bias condition produces a minimal leakage current, primarily due to minority charge carriers. This leakage becomes significant when the reverse...
2.7K

You might also read

Related Articles

Articles linked to this work by shared authors, journal, and citation graph.

Sort by
Same author

Effects of diarylbutane lignans from <i>Schisandra chinensis</i> fruit on SARS-CoV-2 3CL<sup>pro</sup> and PL<sup>pro</sup> and their <i>in vitro</i> anti-inflammatory properties.

Phytomedicine plus : international journal of phytotherapy and phytopharmacology·2023
Same author

Overexpression of a GIPC glycosyltransferase gene, OsGMT1, suppresses plant immunity and delays heading time in rice.

Plant science : an international journal of experimental plant biology·2023
Same author

Hydrocarbons in the Meniscus: Effects on Conductive Atomic Force Microscopy.

Langmuir : the ACS journal of surfaces and colloids·2023
Same author

Unexplained Female Infertility Associated with Genetic Disease Variants.

The New England journal of medicine·2023
Same author

A bibliometric analysis of sleep in older adults.

Frontiers in public health·2023
Same author

Preparation, characterisation, and in vitro cancer-suppression function of RNA nanoparticles carrying miR-301b-3p Inhibitor.

IET nanobiotechnology·2023

Related Experiment Video

Updated: Apr 3, 2026

Silicon Metal-oxide-semiconductor Quantum Dots for Single-electron Pumping
14:58

Silicon Metal-oxide-semiconductor Quantum Dots for Single-electron Pumping

Published on: June 3, 2015

15.5K

Gate-controlled diode structure based electro-optical interfaces in standard silicon-CMOS integrated circuitry.

Kaikai Xu, Haitao Liu, Zhengyuan Zhang

    Applied Optics
    |September 15, 2015
    PubMed
    Summary

    This study introduces a silicon gate-controlled diode that emits visible light. Its field-effect mechanism enables high-speed optical modulation, approaching GHz bandwidth for silicon light-emitting devices (LEDs).

    More Related Videos

    Bidirectional Electrical and Optoelectronic Interfaces in Healthy and Ischemic Ex Vivo Rat Hearts
    08:33

    Bidirectional Electrical and Optoelectronic Interfaces in Healthy and Ischemic Ex Vivo Rat Hearts

    Published on: July 18, 2025

    1.1K
    Fabrication of Flexible Image Sensor Based on Lateral NIPIN Phototransistors
    09:59

    Fabrication of Flexible Image Sensor Based on Lateral NIPIN Phototransistors

    Published on: June 23, 2018

    8.3K

    Related Experiment Videos

    Last Updated: Apr 3, 2026

    Silicon Metal-oxide-semiconductor Quantum Dots for Single-electron Pumping
    14:58

    Silicon Metal-oxide-semiconductor Quantum Dots for Single-electron Pumping

    Published on: June 3, 2015

    15.5K
    Bidirectional Electrical and Optoelectronic Interfaces in Healthy and Ischemic Ex Vivo Rat Hearts
    08:33

    Bidirectional Electrical and Optoelectronic Interfaces in Healthy and Ischemic Ex Vivo Rat Hearts

    Published on: July 18, 2025

    1.1K
    Fabrication of Flexible Image Sensor Based on Lateral NIPIN Phototransistors
    09:59

    Fabrication of Flexible Image Sensor Based on Lateral NIPIN Phototransistors

    Published on: June 23, 2018

    8.3K

    Area of Science:

    • Optoelectronics
    • Semiconductor device physics

    Background:

    • Silicon-based light emission is crucial for integrated photonics.
    • Existing silicon light-emitting diodes (LEDs) face limitations in modulation speed and integration.

    Purpose of the Study:

    • To investigate visible light emission from a silicon gate-controlled diode.
    • To analyze the optical modulation capabilities and dynamic characteristics of this device.

    Main Methods:

    • Fabrication of a monolithically integrated silicon gate-controlled diode.
    • Reverse-biasing the p-n junction to induce field-effect emission.
    • Analysis of modulation principles and dynamic characteristics.

    Main Results:

    • Demonstrated visible light emission from the silicon gate-controlled diode.
    • The field-effect modulation mechanism allows for high-speed operation.
    • Theoretical analysis suggests a bandwidth approaching GHz.

    Conclusions:

    • The silicon gate-controlled diode is a promising candidate for optical modulation in silicon technology.
    • This device enables the design of novel multiterminal silicon light-emitting devices (LEDs).
    • The field-induced emission mechanism is key to achieving high modulation speeds.