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Intrinsic semiconductors are highly pure materials with no impurities. At absolute zero, these semiconductors behave as perfect insulators because all the valence electrons are bound, and the conduction band is empty, disallowing electrical conduction. The Fermi level is a concept used to describe the probability of occupancy of energy levels by electrons at thermal equilibrium. In intrinsic semiconductors, the Fermi level is positioned at the midpoint of the energy gap at absolute zero. When...
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Fabrication And Characterization Of Photonic Crystal Slow Light Waveguides And Cavities
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Optical nonlinearities in high-confinement silicon carbide waveguides.

Jaime Cardenas, Mengjie Yu, Yoshitomo Okawachi

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    |September 15, 2015
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    We observed significant nonlinear optical effects in single-crystal silicon carbide (SiC) waveguides at 2360 nm. This demonstrates SiC

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    Area of Science:

    • Nonlinear optics
    • Materials science
    • Photonics

    Background:

    • Silicon carbide (SiC) is a promising material for photonic applications.
    • Nonlinear optical properties of SiC are crucial for advanced optical devices.

    Purpose of the Study:

    • To investigate and quantify the nonlinear optical properties of single-crystal SiC.
    • To demonstrate the potential of SiC waveguides for nonlinear optics.

    Main Methods:

    • Fabrication of a high-confinement SiC waveguide using a high-temperature smart-cut process.
    • Characterization of nonlinear refractive index (n2) at a wavelength of 2360 nm.

    Main Results:

    • Demonstrated strong nonlinearities with a nonlinear refractive index (n2) of 8.6±1.1×10(-15) cm²/W.
    • Successfully fabricated a high-confinement SiC waveguide.

    Conclusions:

    • Single-crystal SiC exhibits significant nonlinear optical properties at 2360 nm.
    • SiC waveguides are suitable for applications requiring strong nonlinear optical responses.