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Electrical transport properties of AlAs under compression: reversible boundary effect

Jiejuan Yan1, Feng Ke, Cailong Liu

  • 1State Key Lab for Superhard Materials, Institute of Atomic and Molecular Physics, Jilin University, Changchun 130012, China. cc060109@qq.com hanyh@jlu.edu.cn.

Physical Chemistry Chemical Physics : PCCP
|September 19, 2015
PubMed

Keywords:
AlAs electrical transporthigh-pressure experimentsstructural phase transitionssemiconductor resistance

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