Bandgap Tailoring via Si Doping in Inverse-Garnet Mg3Y2Ge3O12:Ce(3+) Persistent Phosphor Potentially Applicable in

Hang Lin1,2, Ju Xu1,2, Qingming Huang3

  • 1Key Laboratory of Design and Assembly of Functional Nanostructures, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences , Fuzhou, Fujian 350002, People's Republic of China.

Related Concept Videos