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Updated: Apr 3, 2026

Using Microwave and Macroscopic Samples of Dielectric Solids to Study the Photonic Properties of Disordered Photonic Bandgap Materials
Published on: September 26, 2014
A New Silicon Phase with Direct Band Gap and Novel Optoelectronic Properties
Yaguang Guo1,2, Qian Wang1,2,3, Yoshiyuki Kawazoe4,5
1Center for Applied Physics and Technology, College of Engineering, Peking University, Beijing 100871, China.
Abstract:
Due to the compatibility with the well-developed Si-based semiconductor industry, there is considerable interest in developing silicon structures with direct energy band gaps for effective sunlight harvesting. In this paper, using silicon triangles as the building block, we propose a new silicon allotrope with a direct band gap of 0.61 eV, which is dynamically, thermally and mechanically stable. Symmetry group analysis further suggests that dipole transition at the direct band gap is allowed. In addition, this new allotrope displays large carrier mobility (~10(4) cm/V · s) at room temperature and a low mass density (1.71 g/cm(3)), making it a promising material for optoelectronic applications.
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