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Updated: Apr 3, 2026

Fabrication of Gate-tunable Graphene Devices for Scanning Tunneling Microscopy Studies with Coulomb Impurities
Published on: July 24, 2015
A Self-Aligned High-Mobility Graphene Transistor: Decoupling the Channel with Fluorographene to Reduce Scattering
Kuan-I Ho1, Mohamed Boutchich2, Ching-Yuan Su3
1Department of Electronic Engineering, Chang Gung University, Kwei-Shan, Tao-Yuan, 333, Taiwan.
Abstract:
The conduction channel of a graphene field-effect transistor (FET) is decoupled from the parasitic charge impurities of the underlying substrate. Fluorographene as a passivation layer is fabricated between the oxide substrate and channel, and a self-aligned gate-terminated FET is also fabricated. This approach significantly reduces the scattering and, as a result, the mobility increases ten fold.
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