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Self-Assembled On-Chip-Integrated Giant Magneto-Impedance Sensorics
Daniil Karnaushenko1, Dmitriy D Karnaushenko1, Denys Makarov1
1Institute for Integrative Nanosciences, Leibniz Institute for Solid State and Materials Research Dresden (IFW Dresden), 01069, Dresden, Germany.
Advanced Materials (Deerfield Beach, Fla.)
|September 24, 2015
Summary
Strain engineering creates 3D giant magneto-impedance (GMI) sensors for improved magnetic domain patterns. This innovation supports the development of CMOS-compatible GMI sensorics for magnetoencephalography applications.
Area of Science:
- Materials Science and Engineering
- Sensor Technology
- Biomedical Engineering
Background:
- Giant magneto-impedance (GMI) sensors offer high sensitivity for magnetic field detection.
- Current GMI sensor fabrication methods face challenges in achieving optimal performance and integration.
- Magnetoencephalography (MEG) requires highly sensitive, non-invasive magnetic field sensors.
Purpose of the Study:
- To introduce a novel strain engineering method for fabricating on-chip-integrated GMI sensors.
- To develop a 3D sensor architecture for enhanced magnetic domain stabilization.
- To lay the groundwork for CMOS-compatible GMI sensorics for magnetoencephalography.
Main Methods:
- Utilizing strain engineering to manipulate material properties.
- Designing a geometrical transformation from a planar to a tubular 3D architecture.
- Integrating pick-up coils with GMI sensor arrays on-chip.
Main Results:
- Successful realization of arrays of on-chip-integrated GMI sensors.
- Stabilization of favorable azimuthal magnetic domain patterns through 3D architecture.
- Demonstration of a novel fabrication approach for advanced sensorics.
Conclusions:
- The developed strain engineering method provides a robust foundation for GMI sensor fabrication.
- The 3D tubular architecture is effective in stabilizing magnetic domain patterns.
- This work paves the way for CMOS-compatible GMI sensors in magnetoencephalography.

