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Updated: Apr 3, 2026

Silicon Metal-oxide-semiconductor Quantum Dots for Single-electron Pumping
Published on: June 3, 2015
Magnetically modulated laser-induced resistance effect observed in Metal-Oxide-Semiconductor structure of
Abstract:
In this study, we report our finding of laser-induced resistance effect in metal-oxide-semiconductor (MOS) structure of Cr/SiO(2)/Si. Under the irradiation of a laser beam, the effect shows a large linear resistance change ratio of 92% with a spatial sensitivity of 0.79 MΩ/mm. In particular, by the application of an external magnetic field perpendicular to the Cr film, the resistance change ratio is increased to 110%. This effect is attributed to the Lorentz force acting on the photo-generated carriers in the inversion layer of MOS structures. The work suggests an approach for the development of new type magnetically modulated photoelectric devices.
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