Electronic Topological Transition in Ag2Te at High-pressure
Yuhang Zhang1, Yan Li1, Yanmei Ma1
1State Key Laboratory of Superhard Materials, College of Physics, Jilin University, Changchun 130012, China.
Scientific Reports
|October 1, 2015
Summary
Silver telluride (Ag2Te) exhibits a pressure-induced electronic topological transition (ETT) at 1.8 GPa. This transition reveals unique insulating properties and structural phase changes, leading to metallization under high pressure.
Area of Science:
- Condensed Matter Physics
- Materials Science
- Solid-State Chemistry
Background:
- Silver telluride (Ag2Te) is a known 3D topological insulator (TI) at ambient conditions.
- High-pressure properties and behaviors of Ag2Te remain largely unexplored.
Purpose of the Study:
- To investigate the high-pressure electronic and structural properties of Ag2Te.
- To identify pressure-induced phase transitions and electronic topological transitions (ETT).
Main Methods:
- First-principle calculations and in situ high-pressure resistivity measurements.
- In situ high-pressure synchrotron powder X-ray diffraction (XRD).
- CALYPSO methodology for structural determination.
Main Results:
- A novel pressure-induced electronic topological transition (ETT) in Ag2Te at 1.8 GPa.
- Ag2Te exhibits a positive pressure coefficient of bulk band-gap, a first for TIs.
- Electrical resistivity peaks at 1.8 GPa, indicating optimal insulating and topological properties.
- Determined the phase transition sequence: P21/c → Cmca → Pnma, correcting previous structural assignments.
- Confirmed pressure-induced metallization at elevated pressures.
Conclusions:
- Ag2Te undergoes significant electronic and structural transformations under pressure.
- The material shows tunable electronic properties, transitioning from insulator to metal.
- The findings provide a comprehensive understanding of Ag2Te's high-pressure phase diagram and topological nature.
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