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Proposal for a Domain Wall Nano-Oscillator driven by Non-uniform Spin Currents
Sanchar Sharma1, Bhaskaran Muralidharan1, Ashwin Tulapurkar1
1Department of Electrical Engineering, Indian Institute of Technology Bombay, Powai, Mumbai 400076, India.
We developed a novel radio-frequency (RF) oscillator using a magnetic domain wall
Area of Science:
- Spintronics
- Condensed Matter Physics
- Nanoelectronics
Background:
- Magnetic domain walls offer rich physics and potential for nanoelectronic devices.
- Existing spintronic devices face challenges in stability and tunability.
Purpose of the Study:
- To propose a new mechanism and device concept for a robust, magnetic field-tunable radio-frequency (RF) oscillator.
- To explore the self-oscillation of magnetic domain walls for RF signal generation.
Main Methods:
- Utilizing a spatially non-uniform vertical DC spin current and a uniform static magnetic field.
- Inducing periodic translation of a magnetic domain wall between two unstable positions.
Main Results:
- Demonstrated stable self-oscillation of a magnetic domain wall under noise.
- Achieved a quality factor exceeding 1000 for the RF oscillator.
- Showcased the potential for magnetic field tunability.
Conclusions:
- The proposed mechanism provides a stable RF oscillator based on magnetic domain wall dynamics.
- This advancement is a step towards all-domain wall logic schemes and spintronic applications.
- The device concept holds promise for future nanoelectronic architectures like racetrack memory.
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