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Updated: Apr 1, 2026

Developing High Performance GaP/Si Heterojunction Solar Cells
Published on: November 16, 2018
Interaction at the silicon/transition metal oxide heterojunction interface and its effect on the photovoltaic
Zhimin Liang1, Mingze Su, Yangyang Zhou
1Siyuan Laboratory, Department of Physics, Jinan University, Guangzhou, Guangdong 510632, P. R. China. wgxie@email.jnu.edu.cn.
Abstract:
The interfacial reaction and energy level alignment at the Si/transition metal oxide (TMO, including MoO3-x, V2O5-x, WO3-x) heterojunction are systematically investigated. We confirm that the interfacial reaction appears during the thermal deposition of TMO, with the reaction extent increasing from MoO3-x, to V2O5-x, and to WO3-x. The reaction causes the surface oxidation of silicon for faster electron/hole recombination, and the reduction of TMO for effective hole collection. The photovoltaic performance of the Si/TMO heterojunction devices is affected by the interface reaction. MoO3-x are the best hole selecting materials that induce least surface oxidation but strongest reduction. Compared with H-passivation, methyl group passivation is an effective way to reduce the interface reaction and improve the interfacial energy level alignment for better electron and hole collection.
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