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Hot Electron-Based Near-Infrared Photodetection Using Bilayer MoS2.
Wenyi Wang1,2, Andrey Klots1,2, Dhiraj Prasai1,2
1Department of Electrical Engineering and Computer Science and ∥Department of Mechanical Engineering, Vanderbilt University , Nashville, Tennessee 37212, United States.
Nano Letters
|October 2, 2015
Summary
Researchers developed a novel photodetector using bilayer molybdenum disulfide (MoS2) and plasmonic antennas. This device efficiently captures hot electrons for enhanced near-infrared photodetection with significant photoamplification.
Area of Science:
- Optoelectronics
- Materials Science
- Nanotechnology
Background:
- Surface plasmon decay generates hot electrons, useful for photodetectors and photovoltaics.
- Hot electron injection into semiconductors via Schottky barriers enables sub-bandgap photocurrent generation.
- Two-dimensional molybdenum disulfide (MoS2) exhibits internal photogain, making it suitable for hot electron acceptance.
Purpose of the Study:
- Investigate hot electron-based photodetection using bilayer MoS2 integrated with plasmonic antennas.
- Demonstrate sub-bandgap photocurrent generation and photoamplification in MoS2 devices.
- Evaluate the performance of these devices for near-infrared photodetection applications.
Main Methods:
- Fabrication of a device comprising a plasmonic antenna array and bilayer MoS2.
- Utilizing hot electron injection from plasmon decay into MoS2.
- Measuring photocurrent and photoresponsivity under sub-bandgap illumination.
Main Results:
- Demonstrated sub-bandgap photocurrent due to hot electron injection into MoS2.
- Achieved significant photoamplification, resulting in a photogain of 10^5.
- Obtained a high photoresponsivity of 5.2 A/W at 1070 nm, surpassing silicon-based detectors.
Conclusions:
- The developed MoS2-based photodetector effectively utilizes hot electrons for enhanced photodetection.
- The observed photoamplification significantly boosts device performance, offering advantages over existing technologies.
- This approach holds promise for future ultracompact near-infrared photodetection and optical memory devices.
