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All-electronic Nanosecond-resolved Scanning Tunneling Microscopy: Facilitating the Investigation of Single Dopant Charge Dynamics
Published on: January 19, 2018
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Dynamic tunneling force microscopy for characterizing electronic trap states in non-conductive surfaces.
1Department of Physics and Astronomy, University of Utah, Salt Lake City, Utah 84112, USA.
The Review of Scientific Instruments
|October 3, 2015
Summary
Dynamic tunneling force microscopy maps electronic trap states in non-conductive films at the atomic scale. This technique uses single electron shuttling and electrostatic force detection for precise characterization.
Area of Science:
- Materials Science
- Surface Science
- Nanotechnology
Background:
- Non-conductive films present challenges for electronic characterization.
- Atomic scale defect analysis is crucial for understanding material properties.
Purpose of the Study:
- To present the physical basis and theoretical model of Dynamic Tunneling Force Microscopy (DTFM).
- To demonstrate the capability of DTFM for atomic-scale mapping of electronic trap states.
Main Methods:
- Utilizes quantum mechanical single electron tunneling between an AFM tip and trap states.
- Measures the electrostatic force induced on the probe tip at the shuttling frequency.
- Employs a physical model to derive the dynamic tunneling signal.
Main Results:
- Developed a theoretical model for DTFM, deriving the dynamic tunneling signal.
- Experimental data quantitatively matched theoretical simulations, validating the physical model.
- Demonstrated representative imaging results of electronic trap states.
Conclusions:
- DTFM is a viable technique for atomic-scale characterization of electronic trap states in non-conductive materials.
- The validated physical model provides a foundation for further DTFM development and application.
- The study confirms the quantitative consistency and effectiveness of the DTFM method.
