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Metal-Semiconductor Junctions01:24

Metal-Semiconductor Junctions

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The contact of metal and semiconductor can lead to the formation of a junction with either Schottky or Ohmic behavior.
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In the region where two bulk phases meet, an intricate electric charge distribution arises due to charge transfer, ion adsorption, molecular orientation, and charge distortion. This complex distribution is commonly referred to as the electrical double layer.When a solid electrode interfaces with ions in an electrolyte solution, the speed of electron transfer dictates the rates of oxidation and reduction. The electrode acquires a charge through the escape of atoms into the solution as cations or...
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Whether a bond is nonpolar or polar covalent is determined by a property of the bonding atoms called electronegativity. 
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Schottky defects arise when some lattice points in a crystal, such as those in NaCl, remain unoccupied, creating lattice vacancies without disturbing the overall electrical neutrality of the crystal. This defect is common in ionic crystals where the positive and negative ions are similar in size, as seen in sodium chloride and cesium chloride. The presence of Schottky defects enables the crystal to conduct electricity to a small extent through an ionic mechanism. Electric fields cause nearby...
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Electron Affinity

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The electron affinity (EA) is the energy change for adding an electron to a gaseous atom to form an anion (negative ion).
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Related Experiment Video

Updated: Apr 1, 2026

Fabrication of Schottky Diodes on Zn-polar BeMgZnO/ZnO Heterostructure Grown by Plasma-assisted Molecular Beam Epitaxy
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Fabrication of Schottky Diodes on Zn-polar BeMgZnO/ZnO Heterostructure Grown by Plasma-assisted Molecular Beam Epitaxy

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Tracking the Effect of Adatom Electronegativity on Systematically Modified AlGaN/GaN Schottky Interfaces.

Maria Reiner1,2, Rudolf Pietschnig2, Clemens Ostermaier1

  • 1Infineon Technologies Austria AG , Siemensstr. 2-5, 9500 Villach, Austria.

ACS Applied Materials & Interfaces
|October 6, 2015
PubMed
Summary

Surface modifications significantly impact Schottky barrier heights in gallium nitride (GaN) devices. Increasing adatom electronegativity, like fluorine, enhances barrier height by altering surface dipoles and band bending.

Keywords:
AlGaNSchottky barrier heightadatomscontact angleinterface dipolesurface energysurfaces modification

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Analysis of Contact Interfaces for Single GaN Nanowire Devices
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Analysis of Contact Interfaces for Single GaN Nanowire Devices

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Analysis of Contact Interfaces for Single GaN Nanowire Devices
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Analysis of Contact Interfaces for Single GaN Nanowire Devices

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Area of Science:

  • Materials Science
  • Surface Science
  • Semiconductor Physics

Background:

  • Schottky barrier height in gallium nitride (GaN) devices is crucial for performance.
  • Surface modifications are often overlooked but significantly influence device characteristics.
  • Understanding surface termination effects is key to optimizing GaN-based electronics.

Purpose of the Study:

  • To investigate the influence of surface terminations on Schottky barrier heights for nickel/aluminum-gallium nitride (Ni/AlGaN) contacts.
  • To establish a correlation between adatom properties (electronegativity, polarization) and Schottky barrier height.
  • To elucidate the role of surface dipoles and surface energy in modifying band bending.

Main Methods:

  • Fabrication of Ni/AlGaN (0001) contacts with varying surface terminations.
  • Measurement of Schottky barrier heights and ideality factors.
  • Analysis of surface dipoles and surface energy using the sessile drop method with diiodomethane.
  • Correlation analysis between adatom electronegativity, surface energy, and barrier height.

Main Results:

  • A strong, linear correlation was observed between increasing adatom electronegativity and Schottky barrier height.
  • Fluorine termination (15%) increased barrier height from 0.7 to 1.1 eV with ideality factors of 1.10 ± 0.05.
  • Surface dipoles were confirmed by changes in surface energy (Lifshitz-van-der-Waals component decreased) and contact angles.
  • Increasing adatom electronegativity led to increased surface dipole formation and altered surface energy.

Conclusions:

  • Surface termination is a critical factor in determining Schottky barrier heights for AlGaN devices.
  • Electronegative adatoms, particularly fluorine, can significantly enhance barrier heights by modifying surface dipoles and band bending.
  • The findings provide a pathway for optimizing AlGaN-based device performance through controlled surface engineering.