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Fabrication of Schottky Diodes on Zn-polar BeMgZnO/ZnO Heterostructure Grown by Plasma-assisted Molecular Beam Epitaxy
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Nonpolar m-plane GaN/AlGaN heterostructures with intersubband transitions in the 5-10 THz band

C B Lim1, A Ajay, C Bougerol

  • 1University Grenoble-Alpes, F-38000 Grenoble, France. CEA, INAC-SP2M, 17 av. des Martyrs, F-38000 Grenoble, France.

Nanotechnology
|October 6, 2015
PubMed

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