Two-dimensional molybdenum disulphide nanosheet-covered metal nanoparticle array as a floating gate in...

Area of Science:

• Materials Science
• Nanotechnology
• Solid-State Electronics

Background:

• Two-dimensional materials show promise for non-volatile memory.
• Current limitations include poor charge trapping control and lack of multi-bit storage in 2D memory devices.

Purpose of the Study:

• To develop a metal nanoparticle-molybdenum disulfide (MoS2) based flash memory with enhanced charge trapping and multi-bit storage capabilities.
• To investigate the potential of two-dimensional materials for advanced memory applications.

Main Methods:

• Fabrication of a floating gate flash memory using a monolayer of metal nanoparticles (Ag, Au, Pt) underneath MoS2 nanosheets.
• Characterization of charge trapping behavior, data retention, and multi-bit storage capabilities.

Main Results:

• Achieved controlled charge trapping and long data retention in metal NP-MoS2 floating gate flash memory.
• Demonstrated multi-bit memory storage with a 3-bit capability and retention up to 10^4 seconds.
• Hypothesized controlled trapping is due to band bending and built-in electric field at the metal NP-MoS2 interface.

Conclusions:

• Metal NP-MoS2 floating gate flash memory offers a promising platform for high-performance non-volatile memory.
• The findings provide insights for developing novel memory devices using atomically thin two-dimensional materials.