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Direct Synthesis of Highly Conductive tert-Butylthiol-Capped CuInS2 Nanocrystals
Aurélie Lefrançois1,2,3, Stéphanie Pouget4,5, Louis Vaure1,2,3
1Univ. Grenoble Alpes, INAC-SPrAM, 38054, Grenoble Cedex 9, France.
Abstract:
tert-butylthiol (tBuSH) is used as the sulfur source, surface ligand and co-solvent in the synthesis of CuInS2 nanocrystals (NCs). The presented method gives direct access to short-ligand-capped NCs without post-synthetic ligand exchange. The obtained 5 nm CuInS2 NCs crystallize in the cubic sphalerite phase with space group F-43m and a lattice parameter a=5.65 Å. Their comparably large optical and electrochemical band gap of 2.6-2.7 eV is attributed to iodine incorporation into the crystal structure as reflected by the composition Cu1.04 In0.96 S1.84 I0.62 determined by EDX. Conductivity measurements on thin films of the tBuSH-capped NCs result in a value of 2.5(.) 10(-2) S m(-1) , which represents an increase by a factor of 400 compared to established dodecanethiol-capped CuInS2 NCs.

