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Room Temperature Oxide Deposition Approach to Fully Transparent, All-Oxide Thin-Film Transistors
Thomas Rembert1,2, Corsin Battaglia1,2, André Anders3
1Electrical Engineering and Computer Sciences Department, University of California, Berkeley, CA, 94720, USA.
Advanced Materials (Deerfield Beach, Fla.)
|October 13, 2015
Abstract:
A room temperature cathodic arc deposition technique is used to produce high-mobility ZnO thin films for low voltage thin-film transistors (TFTs) and digital logic inverters. All-oxide, fully transparent devices are fabricated on alkali-free glass and flexible polyimide foil, exhibiting high performance. This provides a practical materials platform for the low-temperature fabrication of all-oxide TFTs on virtually any substrate.
