Jove
Visualize
Contact Us
JoVE
x logofacebook logolinkedin logoyoutube logo
ABOUT JoVE
OverviewLeadershipBlogJoVE Help Center
AUTHORS
Publishing ProcessEditorial BoardScope & PoliciesPeer ReviewFAQSubmit
LIBRARIANS
TestimonialsSubscriptionsAccessResourcesLibrary Advisory BoardFAQ
RESEARCH
JoVE JournalMethods CollectionsJoVE Encyclopedia of ExperimentsArchive
EDUCATION
JoVE CoreJoVE BusinessJoVE Science EducationJoVE Lab ManualFaculty Resource CenterFaculty Site
Terms & Conditions of Use
Privacy Policy
Policies

Related Concept Videos

Field Effect Transistor01:29

Field Effect Transistor

1.7K
Field-effect transistors (FETs) are integral to electronic circuits and distinguished by their three-terminal setup: the gate, drain, and source. These transistors operate as unipolar devices, which utilize either electrons or holes as charge carriers, in contrast to bipolar transistors, which use both types of carriers. The primary function of the FET is to modulate the flow of these carriers from the source to the drain through a channel. The voltage difference between the gate and source...
1.7K
Bipolar Junction Transistor01:22

Bipolar Junction Transistor

1.9K
Bipolar Junction Transistors (BJTs) are essential elements in electronic circuits, playing a crucial role in the functionality of amplifiers, memories, and microprocessors. These transistors can be designed as NPN or PNP based on their doping patterns. They consist of three layers: the emitter, base, and collector. The configuration of these layers and their respective doping levels—with N-type or P-type impurities—define the transistor's type and its operational...
1.9K
Biasing of FET01:22

Biasing of FET

928
Biasing a Junction Field Effect Transistor (JFET) is crucial for setting operational parameters and ensuring efficient functioning in electronic circuits. JFETs are characterized by using a single carrier type in N-channel or P-channel configurations, where the channel is surrounded by PN junctions. These junctions are central to the device's ability to control current flow.
In an N-channel JFET, the structure consists of N-type material forming the channel on a P-type substrate, with the...
928
MOSFET: Enhancement Mode01:22

MOSFET: Enhancement Mode

1.0K
Enhancement-mode MOSFETs are pivotal components in electronics, distinguished by their capacity to act as highly efficient switches. They are part of the larger family of metal-oxide Semiconductor Field-Effect Transistors (MOSFETs). They are available in two types: p-channel and n-channel, each tailored to specific polarity operations.
In their basic form, enhancement-mode MOSFETs are typically non-conductive when the gate-source voltage (Vgs) is zero. This default 'off' state means no...
1.0K
MOSFET01:16

MOSFET

1.7K
The Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) plays a pivotal role in modern electronics thanks to its versatility and efficiency in controlling electrical currents. This device, also known as IGFET, MISFET, and MOSFET, has three main terminals: the Source, Drain, and Gate. MOSFETs are classified into n-channel or p-channel types based on the doping characteristics of their substrate and the source or drain regions.
In an n-MOSFET, the structure includes n-type source and drain...
1.7K
Characteristics of MOSFET01:17

Characteristics of MOSFET

1.3K
Metal-oxide-semiconductor field-effect Transistors, or MOSFETs, play a critical role in electronic circuits. They are primarily utilized for amplifying and switching signals.
Various vital parameters influence their functionality, which is crucial for theory and electronics applications. First, channel dimensions, precisely length, and width, are pivotal. The size of these channels affects the transistor's ability to carry current and switching speeds; shorter channels typically enable...
1.3K

You might also read

Related Articles

Articles linked to this work by shared authors, journal, and citation graph.

Sort by
Same author

On the fundamentals of organic mixed ionic/electronic conductors.

Journal of materials chemistry. C·2026
Same author

Leaftronics: Bio-Fractal Scaffolds From Leaf Venation for Low-Waste Electronics.

Advanced materials (Deerfield Beach, Fla.)·2026
Same author

A Blend Strategy to Achieve High Gain and Long-Term Stability in Complementary Inverters via Vertical Organic Electrochemical Transistors.

ACS applied materials & interfaces·2026
Same author

<i>In vivo</i> evaluation of a biodegradable intraanastomotic membrane in a porcine model.

Frontiers in surgery·2026
Same author

Much improved thin-film photodiodes with novel organic interlayer.

National science review·2026
Same author

Synthesis and Crystal Engineering of Fluorinated Rubrenes.

The Journal of organic chemistry·2026
Same journal

Topological properties of curved spacetime extended Su-Schrieffer-Heeger model.

Journal of physics. Condensed matter : an Institute of Physics journal·2026
Same journal

Influence of lattice expansion on Cr ferromagnetism in Ce<sub>(1-x)</sub>La<sub>(x)</sub>CrGe<sub>3</sub>compounds revealed by atomic-scale measurements.

Journal of physics. Condensed matter : an Institute of Physics journal·2026
Same journal

Bond-length-driven magnetic transition in quasi-one-dimensional CrSb<i>X</i><sub>3</sub>(<i>X</i>=S, Se).

Journal of physics. Condensed matter : an Institute of Physics journal·2026
Same journal

Anelasticity in MgAl2O4 spinel due to cation order-disorder.

Journal of physics. Condensed matter : an Institute of Physics journal·2026
Same journal

The influence of water on the dynamics of alternating polymers P(C<sub>8</sub>EG<sub>4</sub>) and P(C<sub>4</sub>EG<sub>4</sub>) by broadband dielectric spectroscopy.

Journal of physics. Condensed matter : an Institute of Physics journal·2026
Same journal

How surface curvature shapes water nanodroplets in air.

Journal of physics. Condensed matter : an Institute of Physics journal·2026
See all related articles

Related Experiment Video

Updated: Mar 31, 2026

Effect of Bending on the Electrical Characteristics of Flexible Organic Single Crystal-based Field-effect Transistors
08:43

Effect of Bending on the Electrical Characteristics of Flexible Organic Single Crystal-based Field-effect Transistors

Published on: November 7, 2016

8.5K

Vertical organic transistors.

Björn Lüssem1, Alrun Günther, Axel Fischer

  • 1Department of Physics, Kent State University, Kent, OH 44242, USA.

Journal of Physics. Condensed Matter : an Institute of Physics Journal
|October 15, 2015
PubMed
Summary
This summary is machine-generated.

Vertical Organic Transistors offer a solution to the slow switching speeds and low current densities limiting organic field-effect transistors (OFETs). This novel technology enables smaller channel lengths for improved performance in flexible electronics.

More Related Videos

In Situ Transmission Electron Microscopy with Biasing and Fabrication of Asymmetric Crossbars Based on Mixed-Phased a-VOx
09:49

In Situ Transmission Electron Microscopy with Biasing and Fabrication of Asymmetric Crossbars Based on Mixed-Phased a-VOx

Published on: May 13, 2020

4.4K
Electric-field Control of Electronic States in WS2 Nanodevices by Electrolyte Gating
10:36

Electric-field Control of Electronic States in WS2 Nanodevices by Electrolyte Gating

Published on: April 12, 2018

12.1K

Related Experiment Videos

Last Updated: Mar 31, 2026

Effect of Bending on the Electrical Characteristics of Flexible Organic Single Crystal-based Field-effect Transistors
08:43

Effect of Bending on the Electrical Characteristics of Flexible Organic Single Crystal-based Field-effect Transistors

Published on: November 7, 2016

8.5K
In Situ Transmission Electron Microscopy with Biasing and Fabrication of Asymmetric Crossbars Based on Mixed-Phased a-VOx
09:49

In Situ Transmission Electron Microscopy with Biasing and Fabrication of Asymmetric Crossbars Based on Mixed-Phased a-VOx

Published on: May 13, 2020

4.4K
Electric-field Control of Electronic States in WS2 Nanodevices by Electrolyte Gating
10:36

Electric-field Control of Electronic States in WS2 Nanodevices by Electrolyte Gating

Published on: April 12, 2018

12.1K

Area of Science:

  • Materials Science
  • Organic Electronics
  • Device Physics

Background:

  • Organic field-effect transistors (OFETs) are crucial for flexible electronics but face limitations in switching speed and current density.
  • These performance bottlenecks stem from low charge carrier mobilities and large channel lengths required for cost-effective fabrication.
  • Commercial adoption of OFETs is hindered by these performance constraints, particularly for logic applications and display driving.

Purpose of the Study:

  • To review and compare novel Vertical Organic Transistor (VOT) approaches.
  • To highlight recent advancements in VOT technology.
  • To assess the potential of VOTs to overcome the limitations of traditional OFETs.

Main Methods:

  • Literature review of different Vertical Organic Transistor architectures.
  • Comparative analysis of reported performance metrics (e.g., speed, current density, operating voltage).
  • Discussion of fabrication techniques and their impact on device scaling.

Main Results:

  • Vertical Organic Transistors can achieve channel lengths in the 100nm regime without complex, high-cost patterning.
  • VOTs demonstrate potential for high output currents and low operating voltages.
  • The technology shows promise for significantly improved switching speeds compared to conventional OFETs.

Conclusions:

  • Vertical Organic Transistors represent a promising advancement for next-generation flexible electronic devices.
  • VOTs offer a pathway to overcome the performance limitations of traditional OFETs, enabling wider commercial applications.
  • Further research and development in VOTs are expected to drive innovation in organic electronics.