Related Experiment Video
Updated: Mar 31, 2026

Bulk and Thin Film Synthesis of Compositionally Variant Entropy-stabilized Oxides
Published on: May 29, 2018
Lead-Free α-La₂WO₆ Ferroelectric Thin Films
Thomas Carlier1, Marie-Hélène Chambrier1, Anthony Ferri1
1Unité de Catalyse et de Chimie du Solide, UMR 8181 CNRS, Faculté des Sciences Jean Perrin, Université d'Artois , Rue Jean Souvraz, SP 18, F-62300 Lens, France.
Abstract:
(001)-Epitaxial La2WO6 (LWO) thin films are grown by pulsed laser deposition on (001)-oriented SrTiO3 (STO) substrates. The α-phase (high-temperature phase in bulk) is successfully stabilized with an orthorhombic structure (a = 16.585(1) Å, b = 5.717(2) Å, c = 8.865(5) Å). X-ray-diffraction pole-figure measurements suggest that crystallographic relationships between the film and substrate are [100]LWO ∥ [110]STO, [010]LWO ∥ [11̅0]STO and [001]LWO ∥ [001]STO. From optical properties, investigated by spectroscopic ellipsometry, we extract a refractive-index value around 2 (at 500 nm) along with the presence of two absorption bands situated, respectively at 3.07 and 6.32 eV. Ferroelectricity is evidenced as well on macroscale (standard polarization measurements) as on nanoscale, calling for experiments based on piezo-response force-microscopy, and confirmed with in situ scanning-and-tunneling measurements performed with a transmission electron microscope. This work highlights the ferroelectric behavior, at room temperature, in high-temperature LWO phase when stabilized in thin film and opens the way to new functional oxide thin films dedicated to advanced electronic devices.

