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Use of Sacrificial Nanoparticles to Remove the Effects of Shot-noise in Contact Holes Fabricated by E-beam Lithography
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Sparse nonlinear inverse imaging for shot count reduction in inverse lithography.

Xiaofei Wu, Shiyuan Liu, Wen Lv

    Optics Express
    |October 20, 2015
    PubMed
    Summary

    This study introduces a novel inverse lithography technique (ILT) method using model-based fracturing (MBF) to reduce complex mask patterns. The approach significantly lowers the number of shots required for ArF optical lithography, cutting production costs.

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    Area of Science:

    • Semiconductor manufacturing
    • Optical lithography
    • Computational imaging

    Background:

    • Inverse lithography technique (ILT) is crucial for reducing feature sizes in ArF optical lithography.
    • A key challenge in ILT is the generation of complex curvilinear patterns, increasing fabrication costs due to high shot counts with variable shape beam (VSB) writers.

    Purpose of the Study:

    • To develop an inverse lithography method that reduces the shot count for mask writing.
    • To address the cost inefficiency associated with complex patterns in ILT.

    Main Methods:

    • Incorporation of model-based fracturing (MBF) into the ILT optimization process.
    • Formulation of MBF as a sparse nonlinear inverse imaging problem.
    • Application of a Gauss-Newton algorithm adapted for sparsity promotion.

    Main Results:

    • Demonstrated reduction in the number of shots required to represent complex mask patterns.
    • Successful simulation of the proposed ILT method on various test cases.
    • Validation of the MBF approach for optimizing mask fracturing.

    Conclusions:

    • The proposed ILT method effectively reduces shot count, addressing a critical cost factor in advanced lithography.
    • Model-based fracturing integrated with optimization offers a viable solution for complex pattern generation in semiconductor manufacturing.