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Related Concept Videos

Photoluminescence: Applications01:14

Photoluminescence: Applications

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Photoluminescence offers a wide range of applications due to its inherent sensitivity and selectivity. This technique allows for both direct and indirect analyses of the analyte. Direct quantitative analysis is possible when the analyte exhibits a favorable quantum yield for fluorescence or phosphorescence. However, an indirect analysis may be feasible if the analyte is not fluorescent or phosphorescent, or if the quantum yield is unfavorable. Indirect methods include reacting the analyte with...
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Related Experiment Video

Updated: Mar 31, 2026

Resonance Fluorescence of an InGaAs Quantum Dot in a Planar Cavity Using Orthogonal Excitation and Detection
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InAsP quantum dot lasers grown by MOVPE.

Ivan Karomi, Peter M Smowton, Samuel Shutts

    Optics Express
    |October 20, 2015
    PubMed
    Summary

    We developed Indium Arsenide Phosphide (InAsP) quantum dot lasers emitting at longer wavelengths (760-775 nm) compared to Indium Phosphide (InP) lasers. InAsP dots show potential for high-power pulsed lasing up to 380 K.

    Area of Science:

    • Materials Science
    • Optoelectronics
    • Semiconductor Physics

    Background:

    • Quantum dot lasers are crucial for tunable and efficient light emission.
    • Indium Phosphide (InP) based quantum dots are established but limited in emission wavelength.
    • Indium Arsenide Phosphide (InAsP) offers potential for longer wavelength emission.

    Purpose of the Study:

    • To investigate the performance of InAsP quantum dot lasers.
    • To compare InAsP quantum dot lasers with traditional InP quantum dot lasers.
    • To analyze the effects of incorporating Arsenic on quantum dot properties and laser performance.

    Main Methods:

    • Metalorganic Vapor Phase Epitaxy (MOVPE) for growing InAsP and InP quantum dots.
    • Fabrication and characterization of uncoated facet quantum dot lasers (1-4 mm length).

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  • Optical absorption spectroscopy and Transmission Electron Microscopy (TEM) for material analysis.

    • Main Results:

    • InAsP quantum dot lasers achieved emission wavelengths between 760-775 nm.
    • 2 mm InAsP lasers exhibited a threshold current density of 260 Acm⁻², while InP lasers showed 150 Acm⁻² at shorter wavelengths (715-725 nm).
    • Pulsed lasing up to 380 K with 200 mW output power was demonstrated for InAsP dots. InAsP incorporation shifted emission to longer wavelengths and increased spectral broadening due to significant inhomogeneous broadening from dot size variation.

    Conclusions:

    • InAsP quantum dots enable longer wavelength emission compared to InP dots.
    • While exhibiting higher threshold current density and broader spectral features, InAsP quantum dot lasers demonstrate viable pulsed lasing performance at elevated temperatures and high output power.
    • The increased inhomogeneous broadening in InAsP dots presents challenges but also opportunities for tailored optical properties.