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A Low-Temperature, Solution-Processable, Cu-Doped Nickel Oxide Hole-Transporting Layer via the Combustion Method for
Jae Woong Jung1, Chu-Chen Chueh1, Alex K-Y Jen1,2
1Department of Materials Science and Engineering, University of Washington, Seattle, WA, 98195, USA.
Abstract:
Low-temperature, solution-processable Cu-doped NiOX (Cu:NiOx ), prepared via combustion chemistry, is demonstrated as an excellent hole-transporting layer (HTL) for thin-film perovskite solar cells (PVSCs). Its good crystallinity, conductivity, and hole-extraction properties enable the derived PVSC to have a high power conversion efficiency (PCE) of 17.74%. Its general applicability for various elecrode materials is also revealed.
