Related Experiment Video
Updated: Mar 31, 2026

07:24
Quantitative Atomic-Site Analysis of Functional Dopants/Point Defects in Crystalline Materials by Electron-Channeling-Enhanced Microanalysis
Published on: May 10, 2021
6.9K
Unconventional interplay between heterovalent dopant elements: Switch-and-modulator band-gap engineering in (Y,
Scientific Reports
|October 22, 2015
Summary
Cobalt (Co) dopants switch on yttrium (Y)-induced band gap reduction in cerium dioxide (CeO2) by creating oxygen vacancies. This discovery offers new pathways for advanced materials in solar energy and environmental applications.
Area of Science:
- Materials Science
- Solid State Physics
- Nanotechnology
Background:
- Cerium dioxide (CeO2) is a versatile material with potential applications in catalysis and energy.
- Doping CeO2 with trivalent yttrium (Y) can induce oxygen vacancies and modify its electronic properties.
- The role of other dopants, like cobalt (Co), in modulating these effects is not fully understood.
Purpose of the Study:
- To investigate the unconventional interplay between cobalt (Co) and yttrium (Y) dopants in CeO2.
- To elucidate the mechanism behind Co-induced activation of Y-modulated band gap reduction.
- To explore the potential of this doping strategy for band gap engineering in nanocrystal materials.
Main Methods:
- Experimental synthesis and characterization of Co and Y co-doped CeO2.
- Synchrotron-radiation x-ray diffraction for structural verification.
- Density functional theory (DFT) calculations for theoretical explanation of electronic structure changes.
Main Results:
- Co dopants act as a switch, activating the dormant band gap reduction effect of Y.
- Oxygen vacancies incurred by Y doping facilitate the lowering of the Co 3d band.
- Hybridization of Co 3d and Ce 4f bands leads to significant band gap narrowing.
- Experimental observations are consistent with DFT predictions.
Conclusions:
- An unconventional switch-and-modulator scheme for band gap engineering in CeO2 has been demonstrated.
- The interplay between Co and Y dopants offers a novel approach to tune material properties.
- This research paves the way for advanced applications in environmental protection and solar energy harvesting.
Related Concept Videos
Imperfections in Crystal Structure: Non-Stoichiometric Defects
75
Non-stoichiometric defects refer to a type of defect in the crystal structure of a compound where the ratio of its constituent elements deviates from the ideal stoichiometric ratio. There are two main types of non-stoichiometric defects: metal excess defects and metal deficiency defects.Metal excess defects occur when there is a slight surplus of metal ions than what is required by the stoichiometric ratio of the compound. For example, heating a sodium chloride crystal in sodium vapor results...
75
Imperfections in Crystal Structure: Stoichiometric Point Defects
85
Schottky defects arise when some lattice points in a crystal, such as those in NaCl, remain unoccupied, creating lattice vacancies without disturbing the overall electrical neutrality of the crystal. This defect is common in ionic crystals where the positive and negative ions are similar in size, as seen in sodium chloride and cesium chloride. The presence of Schottky defects enables the crystal to conduct electricity to a small extent through an ionic mechanism. Electric fields cause nearby...
85
Biasing of Metal-Semiconductor Junctions
815
Biasing metal-semiconductor junctions involves applying a voltage across the junction. Specifically, the metal is connected to a voltage source, while the semiconductor is grounded. This technique is essential for controlling the direction and magnitude of current flow in electronic devices, including diodes, transistors, and photovoltaic cells.
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...
815

