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Valley depolarization in monolayer WSe2.

Tengfei Yan1, Xiaofen Qiao1, Pingheng Tan1

  • 1State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing, 100083, People's Republic of China.

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|October 23, 2015
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Summary

Circular polarization in monolayer tungsten diselenide (WSe2) reveals insights into valley depolarization. This study confirms the intervalley electron-hole exchange interaction and observes a non-monotonic polarization dependence on excitation power.

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Area of Science:

  • Condensed Matter Physics
  • Materials Science
  • Quantum Optics

Background:

  • Monolayer transition metal dichalcogenides (TMDs) exhibit unique valley-dependent optical properties.
  • Understanding valley dynamics is crucial for spintronic and valleytronic applications.
  • Circular polarization is a key observable for probing valley coherence.

Purpose of the Study:

  • To systematically investigate the circular polarization of monolayer WSe2.
  • To elucidate the mechanisms governing valley depolarization.
  • To explore the relationship between exciton density and valley polarization.

Main Methods:

  • Experimental measurements of circular polarization in monolayer WSe2.
  • Varying temperature, excitation energy, and exciton density.
  • Analysis based on intervalley electron-hole exchange interaction and D'yakonov-Perel' mechanism.

Main Results:

  • Experimental confirmation of intervalley electron-hole exchange interaction as the cause of valley depolarization.
  • Observation of a non-monotonic dependence of valley circular polarization on excitation power density.
  • Evidence for non-monotonic dependence of exciton intervalley scattering rate on exciton density.

Conclusions:

  • The intervalley electron-hole exchange interaction dictates valley depolarization in WSe2.
  • The observed non-monotonic behavior provides new insights into exciton dynamics.
  • Results offer a fundamental understanding of valley pseudospin relaxation in 2D materials.