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Fabrication of Schottky Diodes on Zn-polar BeMgZnO/ZnO Heterostructure Grown by Plasma-assisted Molecular Beam Epitaxy
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Properties of Schottky Barrier Diodes on (In(x)Ga(1-x))₂O₃ for 0.01 ≤ x ≤ 0.85 Determined by a Combinatorial Approach

H von Wenckstern1, D Splith1, A Werner1

  • 1Universität Leipzig , Institut für Experimentelle Physik II, Halbleiterphysik, Linnéstraße 5, 04103 Leipzig, Germany.

ACS Combinatorial Science
|October 23, 2015
PubMed

Keywords:
Schottky diodecontinuous composition spreadgroup III sesquioxidephase separationpulsed laser depositionsegmented targetsolid solution

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