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Updated: Mar 31, 2026

Visualizing Uniaxial-strain Manipulation of Antiferromagnetic Domains in Fe1+YTe Using a Spin-polarized Scanning Tunneling Microscope
Published on: March 24, 2019
Ba(Zn(1-2x)MnxCux)2As2: A Bulk Form Diluted Ferromagnetic Semiconductor with Mn and Cu Codoping at Zn Sites
Huiyuan Man1,2, Shengli Guo1,2, Yu Sui3
1Department of Physics, Zhejiang University, Hangzhou 310027, China.
Abstract:
We report the synthesis and characterization of a bulk form diluted magnetic semiconductor Ba(Zn(1-2x)MnxCux)2As2 (0.025 ≤ x ≤ 0.2) with the crystal structure identical to that of "122" family iron based superconductors and the antiferromagnet BaMn2As2. No ferromagnetic order occurs with (Zn, Mn) or (Zn, Cu) substitution in the parent compound BaZn2As2. Only when Zn is substituted by both Mn and Cu simultaneously, can the system undergo a ferromagnetic transition below TC ~ 70 K, followed by a magnetic glassy transition at Tf ~ 35 K. AC susceptibility measurements for Ba(Zn0.75Mn0.125Cu0.125)2As2 reveal that Tf strongly depends on the applied frequency with [formula in text] and a DC magnetic field dependence of [formula in text], demonstrating that a spin glass transition takes place at Tf. As large as -53% negative magnetoresistance has been observed in Ba(Zn(1-2x)MnxCux)2As2, enabling its possible application in memory devices.
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