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Ultrasensitive Phototransistors Based on Few-Layered HfS2
Kai Xu1, Zhenxing Wang1, Feng Wang1
1National Center for Nanoscience and Technology, Beijing, 100190, P. R. China.
Advanced Materials (Deerfield Beach, Fla.)
|October 27, 2015
Abstract:
An ultrathin HfS2 -based ultrasensitive phototransistor is systematically studied. Au-contacted HfS2 phototransistors with ideal thickness ranging from 7 to 12 nm exhibit a high on/off ratio of ca. 10(7) , ultrahigh photoresponsivity over 890 A W(-1) , and photogain over 2300. Moreover, the response time is strongly dependent on the back-gate voltage and shows a reverse trend for Au and Cr metals.

