Related Experiment Video
Updated: Mar 31, 2026
11:42
Fabrication of Gate-tunable Graphene Devices for Scanning Tunneling Microscopy Studies with Coulomb Impurities
Published on: July 24, 2015
16.2K
Precisely Controlled Ultrastrong Photoinduced Doping at Graphene-Heterostructures Assisted by Trap-State-Mediated
Po-Hsun Ho1, Chun-Hsiang Chen2,3, Fu-Yu Shih4,5
1Department of Materials Science and Engineering, National Taiwan University, Taipei, 106, Taiwan.
Advanced Materials (Deerfield Beach, Fla.)
|October 29, 2015
Abstract:
Ultrastrong and precisely controllable n-type photoinduced doping at a graphene/TiOx heterostructure as a result of trap-state-mediated charge transfer is demonstrated, which is much higher than any other reported photodoping techniques. Based on the strong light-matter interactions at the graphene/TiOx heterostructure, precisely controlled photoinduced bandgap opening of a bilayer graphene device is demonstrated.
