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Interface Schottky barrier engineering via strain in metal-semiconductor composites

Xiangchao Ma1, Ying Dai1, Lin Yu1

  • 1School of Physics, State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, People's Republic of China. daiy60@sina.com bbhuang@sdu.edu.cn.

Nanoscale
|October 30, 2015
PubMed
Summary

Strain effectively reduces the Schottky barrier height (SBH) in metal-semiconductor heterostructures like Au/TiO2. This tunability offers a new pathway for enhancing device performance in industrial applications.

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