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Synthesis of Large-Sized Single-Crystal Hexagonal Boron Nitride Domains on Nickel Foils by Ion Beam Sputtering
Haolin Wang1, Xingwang Zhang1, Heng Liu1
1Key Lab of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, P. R. China.
Advanced Materials (Deerfield Beach, Fla.)
|November 3, 2015
Abstract:
Large-sized single-crystal h-BN domains with a lateral size up to 100 μm are synthesized on Ni foils by ion-beam sputtering deposition. The nucleation density of h-BN is dramatically decreased by reducing the concentrations of both active sites and species on the Ni surface through a brief in situ pretreatment of the substrate and optimization of the growth parameters, enabling the growth of large-sized domains.
