Electrical Double Layer Capacitance in a Graphene-embedded Al2O3 Gate Dielectric

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Fabrication of Gate-tunable Graphene Devices for Scanning Tunneling Microscopy Studies with Coulomb Impurities
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Published on: July 24, 2015

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Bok Ki Min1,2, Seong K Kim3, Seong Jun Kim1

  • 1Thin Film Materials Research Center, Korea Research Institute of Chemical Technology (KRICT), Yuseong P. O. Box 107, Daejeon 305-600, Republic of Korea.

Scientific Reports
|November 5, 2015
PubMed

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