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Strain-driven band inversion and topological aspects in Antimonene
Mingwen Zhao1, Xiaoming Zhang1, Linyang Li1
1School of Physics and State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, Shandong, China.
Scientific Reports
|November 6, 2015
Summary
Researchers found that antimonene can become a 2D topological insulator (TI) with a large band gap, crucial for room-temperature quantum spin Hall effect (QSHE). Applying tensile strain tunes antimonene
Area of Science:
- Condensed Matter Physics
- Materials Science
- Quantum Chemistry
Background:
- Two-dimensional (2D) topological insulators (TIs) are sought for high-temperature quantum spin Hall effect (QSHE).
- Achieving a large bulk band gap is essential for practical QSHE applications.
Purpose of the Study:
- To investigate the potential of antimonene as a 2D topological insulator.
- To explore strain engineering as a method to tune antimonene's electronic properties.
Main Methods:
- First-principles calculations were employed to study antimonene's electronic structure.
- Tensile strain was applied to modify the lattice structure and analyze band gap changes.
Main Results:
- Antimonene can be tuned into a 2D TI by reducing its buckling height via tensile strain.
- A maximum tensile strain of 18% yields a bulk band gap of 270 meV.
- Strain-induced band inversion drives the topological phase transition.
Conclusions:
- Strained antimonene is a promising material for achieving high-temperature QSHE.
- Tunable band gaps in antimonene meet demands for low-power electronic devices.
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